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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6823 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/4 H2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. SOT-23 Absolute Maximum Ratings Drain-Source Voltage............................................................................................................. 60 V Drain-Gate Voltage (RGS=1M) ........................................................................................... 60 V Gate-Source Voltage ........................................................................................................ +/-40 V Continuous Drain Current (Ta=25C)(1) ........................................................................... 200 mA Continuous Drain Current (Ta=100C)(1) ......................................................................... 115 mA Pulsed Drain Current (Ta=25C)(2)................................................................................... 800 mA Total Power Dissipation (Tc=25C) .................................................................................. 200 mW Derate above 25C ................................................................................................... 0.16 Mw / C Storage Temperature ............................................................................................... -55 to 150 C Operating Junction Temperature ............................................................................. -55 to 150 C Lead Temperature, for 10 second Soldering...................................................................... 260 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient ................................................................... 625 C / W Characteristics (Ta=25C) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Source Leakage Current, Forward Gate Source leakage Current, Reverse Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source On-State Voltage Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol BVDSS VGS(th) IGSS/F IGSS/R IDSS ID(ON) Test Conditions Min 60 1 500 80 - Typ. - Max 2.5 100 100 1 0.375 3.75 7.5 7.5 50 25 5 Unit V V nA nA uA mA V V mS pF pF pF VGS=0, ID=10uA VDS=2.5V, ID=0.25mA VGS=+20V, VDS=0 VGS=-20V, VDS=0 VDS=60V, VGS=0 VDS>2VDS(ON), VGS=10V ID=50mA, VGS=5V VDS(ON) ID=500mA, VGS=10V ID=50mA, VGS=5V RDS(ON) ID=500mA, VGS=10V GFS VDS>2VDS(ON), ID=200mA Ciss Coss VDS=25V, VGS=0, f=1MHz Crss (1)The Power Dissipation of the package may result in a continuous drain current. (2)Pulse Width300us, Duty cycle2%. H2N7002 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Output Characteristics 1 0.9 0.8 0.7 VGS=10V 9V 8V 7V 6V 0.8 0.7 VDS=10V 0.6 0.5 0.4 0.3 4V 3V 0 2 4 6 8 10 0.2 0.1 0 0 2 4 6 TJ=-55C Spec. No. : HE6823 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 2/4 Transfer Characteristics Tj=25C Tj=150C ID(A) 0.5 0.4 0.3 0.2 0.1 0 5V ID(A) 0.6 8 10 12 VDS(V) VGS(V) Typical Transconductance 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 0.2 0.4 0.6 0.8 1 0 0 VDS=7V Tj=-55C Tj=25C Tj=150C 10 8 VGS=4V On-resistance versus Drain Current VGS=6V RDS(on) gFS(S) 6 4 VGS=8V 2 VGS=10V 0.2 0.4 0.6 0.8 1 ID(A) ID(A) Capacitance 70 60 50 2.5 On-Resistance Variation With Temperature 2 RDS(on) (m ) C(pF) 40 30 20 10 0 0 10 20 30 40 50 Coss Crss Ciss 1.5 VGS=10V ID=0.5A 1 0.5 0 -50 0 50 100 150 VDS(V) Tj Junction Temperature Breakdown Voltage Variation With Temperature 1.2 1.1 Source-Drain Diode Forward Voltage 0.8 0.7 Tj=150C Tj=25C BVDSS(V) 1 0.9 0.8 0.7 0.6 -50 VGS=0 ID=0.25mA 0.6 0.5 Is(mA) Tj=-55C 0.4 0.3 0.2 0.1 0 0 50 100 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Tj Junction Temperature VSD(V) H2N7002 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6823 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 3/4 Safe Operating Area 10 1 0.9 0.8 Power Derating PD ,Power Dissipation (W) 1 0.7 0.6 0.5 0.4 0.3 0.2 0.1 100us Id (A) 0.1 1ms 10ms 100ms 0.01 DC 0.001 1 10 100 0 0 25 50 75 100 125 150 175 Vds (V) T,EMPERATURE Thermal Response 1 0.5 r(t) ,Transient Thermal Resistance (normalized) 0.2 0.1 0.1 0.05 0.02 0.01 single pluse 0.01 0.1 1 10 100 1000 t ,Time(ms) H2N7002 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-23 Dimension Spec. No. : HE6823 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 4/4 A L Marking: 3 BS 1 V G 2 702 Control Code 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N C D H K J Style: Pin 1.Gate 2.Source 3.Drain *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H2N7002 HSMC Product Specification |
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